Abstract
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Highlights
The current trend of pursuing an extreme miniaturization of electronic circuits demands appropriate platforms for studying charge transport in systems of reduced dimensions
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires
We have optimized a gradual electromigration process for obtaining devices consisting of three terminals, which are capacitively coupled to a metallic cluster of nanometric dimensions
Summary
The current trend of pursuing an extreme miniaturization of electronic circuits demands appropriate platforms for studying charge transport in systems of reduced dimensions. In situ electrical characterization of palladium-based single electron transistors made by electromigration technique We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires.
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