In Situ Doping of Black Phosphorus by High-Pressure Synthesis.

Abstract

Black phosphorus is a two-dimensional semiconductor with promising properties for catalysis, energy storage, and conversion as well as electronic device applications, and control of its electronic structure is critical for such applications. Substitutional doping of phosphorus by electron donating (e.g., sulfur) or electron accepting elements (e.g., germanium) can significantly change its properties, especially charge carrier concentration. Here, we report the in situ doping of black phosphorus by its direct synthesis from a mixture of red phosphorus and a dopant by high pressure synthesis. In detail, we study the incorporation of germanium, sulfur, selenium, and tellurium within black phosphorus, showing significant differences in incorporation of individual elements and assess their suitability for potential electrochemical applications.