Abstract
AbstractIn this paper we present a growth of Ga1–xMnxN layers by MOVPE and ion implantation of GaN layers with Mn. The Mn concentration detected by electron microprobe and PIXE was well below the solubility limit, ranging from 0.2 to 1.1 at.%. Implanted doses of Mn ions were in the range 1x1016‐5x1016 Mn atoms.cm–2 with energy of 330 keV. The analysis of the MOVPE deposition process of Ga1–xMnxN thin films revealed an unfavorable ratio between the apparent Mn concentration in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 °C was found out as a compromise between the layer quality and Mn concentration. In both in‐situ grown and implanted samples, a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase were observed. The ferromagnetic moment observed in implanted samples was influenced by free carrier concentration in GaN layers which were used for implantation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
