Abstract

Using metal plasma immersion ion implantation and deposition (MePIIID), it is possible to form dense metallic layers with excellent adhesion properties at low temperatures, for example on polymers. Rutherford backscattering spectroscopy is one method to determine the thickness of the layer and the interface: albeit, the polymer is destroyed by the high energy ions and gaseous products can diffuse out. For this study, an Al layer is used as a diffusion barrier, trapping fluorine at the interface between the polymer and the metallisation. The barrier efficiency is investigated as a function of layer thickness and pulse voltage during MePIIID.

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