Abstract
AbstractDeposition processes of Cu(In,Ga)Se2 (CIGS) thin films were observed by informative and low‐cost in situ monitoring means; the pyrometer technique, and the spectroscopic light‐scattering (SLS) technique. Intensities of thermal radiation and scattered white light were profiled from outside the vacuum chamber during growth, using a monochromatic pyrometer and a small CCD spectrometer. The deposition process was studied by systematic variations of major process parameters of CIGS, such as the substrate temperature, Ga concentration and Se supply. Various film properties, including the deposition speed, thickness, compositional ratios, surface roughness and precipitation of Cu‐rich phases have been monitored in situ. Copyright © 2004 John Wiley & Sons, Ltd.
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