Abstract
The interface reactions between hydrogenated amorphous silicon (a-Si:H) and natural oxides on metal substrates were investigated using polarization modulated IR reflectometry with an external incident angle of 80°. A persistent decrease in the surface oxide absorption in the aluminum metal substrate is observed with a-Si:H film growth. Several other types of interface reactions are presented for copper, molybdenum and transparent conducting oxide substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
