Abstract
The vacuum deposition method requires high energy and temperature. Hydrophobic reduced graphene oxide (rGO) can be obtained by plasma-enhanced chemical vapor deposition under atmospheric pressure, which shows the hydrophobic surface property. Further, to compare the effect of hydrophobic and the hydrophilic nature of catalysts in the photoelectrochemical cell (PEC), the prepared rGO was additionally treated with plasma that attaches oxygen functional groups effectively to obtain hydrophilic graphene oxide (GO). The hydrogen evolution reaction (HER) electrocatalytic activity of the hydrophobic rGO and hydrophilic GO deposited on the p-type Si wafer was analyzed. Herein, we have proposed a facile way to directly deposit the surface property engineered GO.
Highlights
Graphene has attracted great attention through decades due to high stability, high surface area, good thermal conductivity, and fast carrier mobility [1]
We suggest a new pathway for the direct deposition of graphene oxide (GO) and reduced graphene oxide (rGO) onto Si substrates
Results and Discussion that the as-deposited rGO and GO were distinguishable from graphene
Summary
Graphene has attracted great attention through decades due to high stability, high surface area, good thermal conductivity, and fast carrier mobility [1]. Reduced graphene oxide (rGO) is a promising alternative for bulk production of graphene-like materials. Hydrogen can be produced by various techniques such as steam reforming of natural gas and electrolysis of water. The former technique utilizes fossil fuels and emits greenhouse gases, while the latter hinges on electricity that is relatively costly and less efficient, limiting its large-scale production [6,7]. To bridge the gap between lab-scale production and commercialization, the scientific community has been trying to do electrolysis of water by the photoelectrochemical method, which utilizes sunlight to oxidize or reduce water into oxygen and hydrogen [6]
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