Abstract
A Au/n-GaAs(100) Schottky diode was irradiated at 80 r K by a 180 r MeV 107 Ag 14+ ion beam. In situ current-voltage (I--V) characterization of the diode was performed at various irradiation fluences ranging from 1 ‐ 10 10 to 1 ‐ 10 13 r ions r cm m 2 . The semiconductor was heavily doped (carrier concentration=1 ‐ 10 18 r cm m 3 ), hence thermionic field emission was assumed to be the dominant current transport mechanism in the diode. Systematic variations in various parameters of the Schottky diode like characteristic energy E 0 , ideality factor n , reverse saturation current I S , flatband barrier height K bf and reverse leakage current I R have been observed with respect to the irradiation fluence. The nuclear and electronic energy losses of the swift heavy ion affect the interface state density at the metal-semiconductor interface resulting in observed variations in Schottky diode parameters.
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