Abstract
Copper powder has excellent electrical conductivity, but is easily oxidized by air. This limits its application in printed circuits and related fields. In this paper, graphene was grown in-situ on the surface of dendritic copper powder in order to improve the powders’ oxidation resistance and maintain its high electrical conductivity. Firstly, dendritic copper powder with a diameter of about 100-200 nm was prepared by electrochemical deposition. Then, the powder was coated with an amorphous carbon film by Plasma Enhanced Chemical Vapor Deposition (PECVD) using C2H2 at 350 °C. Finally, the amorphous carbon film was transformed into graphene at 850 °C, and dendritic copper powder coated with graphene was obtained. TG-DTA and electrical resistivity measurements showed that the oxidation resistance temperature of dendritic copper powder can be increased from 213.7 °C to 283.4 °C and the resistivity can be reduced from 0.00544 Ω·cm to 0.00308 Ω·cm by in-situ growth of graphene on the surface of copper powder. The in-situ synthesis of graphene is expected to promote the wide application of copper powder in areas requiring high electrical conductivity and oxidation resistance.
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