Abstract
Trisdimethylaminoarsine (TDMAAs) has been used to clean SiO2-patterned GaAs surfaces prior to selective regrowth. Under TDMAAs pressure, the native oxide was completely removed at 480° C which is 110° C lower than the temperature of thermal oxide desorption. Compared to oxide removal with arsine, the morphology and the purity of the deoxidized surface are improved with TDMAAs cleaning. It was found that additional ex-situ chemical treatments further improve the cleaning. With the proper ex-situ preparation and TDMAAs cleaning, secondary ion mass spectrometry (SIMS) shows the removal of carbon at the regrowth interface to levels below the residual carbon concentration, while oxygen and silicon impurity concentrations are, respectively, 7.8×1011 cm-2 and 1.7×1011 cm-2. The carrier depletion at the regrowth interface is reduced to 2.6×1011 cm-2 and contact resistivity is lowered to 2.7×10-6 Ω· cm2.
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