In Situ Characterization of Triboelectrochemical Effects on Topography of Patterned Copper Surfaces

Abstract

The topographic response of patterned copper surfaces to chemical–mechanical polishing (CMP) was investigated using a triboelectrochemical approach. Experimental methods include using a combined system containing a tribometer and a potentiostat. Results showed that more step height reduction and lower average surface roughness were obtained via CMP in acidic than in alkaline slurry. The increased contact area between wafer, pad, and abrasives was associated with the increase in friction. It was found that pH-dependent oxide formation and removal dominate the step height reduction for both acidic and alkaline slurries. The in situ approach pinpointed interactions between mechanical stimulation, chemical reaction, and electrochemical passivation. This research is beneficial to understanding triboelectrochemistry in Cu chemical–mechanical polishing of patterned wafers, an important application in semiconductor manufacturing.