Abstract
The surface hydrogen on the growing a-Si:H film in a glow discharge reactor is investigated by using real time in-situ infrared reflection absorption spectroscopy (IRRAS). The temperature dependence of the dominant bonding configuration for the surface hydrides is determined in the vibrational spectra of stretching modes. The integrated absorption intensities at temperatures below 380° C remain almost constant and correspond to the monolayer coverage of the growing surface by hydrogen.
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