Abstract
ABSTRACTA low-thermal budget, in-situ boron doped silicon epitaxy process for channel engineering and ultra shallow junction formation is presented. Ultra-thin silicon films (100–500 Å) have been deposited in a single-wafer Ultra High Vacuum Rapid Thermal Vapor Deposition (UHV-RTCVD) reactor using disilane (Si2H6), diborane (B2H6), and chlorine (Cl2) at temperatures between 750- 800°C. Boron doping can be varied five orders of magnitude (1016 cm-3 1021 cm3) with very abrupt doping transitions (∼50–70 Å/decade). Short channel (Leff =0.12 /μm) lightly-doped nchannel MOSFETs have been successfully realized free of ion-implantation in the channel region. As another application, ultra-shallow, defect-free, abrupt junctions (<500 Å) through diffusion from selectively-deposited in-situ boron doped films have been demonstrated.
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