Abstract
In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001)Pt//(001)Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.
Highlights
In situ atomic-level observation of the formation of platinum silicide at platinumsilicon oxide interfaces under electron irradiation
(1) Silicide formation occurred through epitaxial growth on the metal at the platinum (Pt)/silicon oxide (SiOx) interface during transmission electron microscope (TEM) beam irradiation3,4 and scanning of an electron beam probe during scanning transmission electron microscopy (STEM) observation.5 (2) Amorphous phase formation occurred at palladium (Pd)/SiOx interfaces.6–8 (3) Silicide formation occurred through the crystallization of an amorphous phase at Pd–Si amorphous/SiOx interfaces.9 (4) Silicide formation occurred via amorphous phase formation at Pd/SiOx interfaces
The preparation of Pt/SiOx specimens for TEM and STEM observation has been reported earlier.3; Pt particles were grown on (001) cleaved NaCl substrates by magnetron sputtering of a Pt target (Furuuchi Chemical Co., Ltd)
Summary
In situ atomic-level observation of the formation of platinum silicide at platinumsilicon oxide interfaces under electron irradiation.
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