Abstract
We present results from the anodization of an aluminum single crystal [Al(111)] and an aluminum alloy [Al 6060] studied by in situ x-ray reflectivity, in situ electrochemical impedance spectroscopy and ex situ scanning electron microscopy. For both samples, a linear increase of oxide film thickness with increasing anodization voltage was found. However, the slope is much higher in the single crystal case, and the break-up of the oxide film grown on the alloy occurs at a lower anodization potential than on the single crystal. The reasons for these observations are discussed as are the measured differences observed for x-ray reflectivity and electrochemical impedance spectroscopy.
Highlights
Aluminum and its alloys are used in a broad range of everyday commercial products as well as of interest in future microelectronics
We present results from the anodization of an aluminum single crystal [Al(111)] and an aluminum alloy [Al 6060] studied by in situ x-ray reflectivity, in situ electrochemical impedance spectroscopy and ex situ scanning electron microscopy
The (111) surface has a higher atomic density than a polycrystalline surface since a polycrystalline surface consists only partly of (111) surfaces and partly of surfaces with a lower
Summary
Aluminum and its alloys are used in a broad range of everyday commercial products as well as of interest in future microelectronics. As a result of the attractive properties of Al, extensive research on Al has been made for a long time, focusing both on applied as well as on basic research, with the ultimate aim on improved Al products. It has since long been realized that the corrosion resistance of Al is dependent upon a protective oxide film[1] formed spontaneously in air at room temperature. The growth and properties of this oxide film are crucial for the corrosion protection and other functions, in particular in aggressive environments, and the oxide film formation has received enormous attention.[2]. Surface science studies have provided detailed information on the initial formation of the protective oxide at low or ambient temperature using highly controlled ultra high vacuum (UHV) conditions and well-prepared single crystal surfaces[3–11] as well as by using theoretical means.[12]
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