Abstract
Thin strontium oxide films were grown at 350°C in an oxygen atmosphere of 5 ×10-8 Torr by Sr-deposition using molecular beam epitaxy (MBE). The evolution of 300-Å-thick SrO films on a Si(001)-2 ×1 substrate is studied by reflection high-energy electron diffraction (RHEED) as a function of annealing temperature in an oxygen atmosphere of around 1 ×10-6 Torr. The RHEED patterns of the SrO crystalline films show streaks with spots up to an annealing temperature of 625°C, and then Debye-Scherrer rings appear with broad spots at 650°C. Above this temperature, the patterns consist only of the rings. From the results, we find that the growth temperature for any epitaxial film on Si with a MBE-grown SrO buffer layer is restricted to be under 625°C.
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