Abstract
AbstractMnAs thin films were grown by molecular beam epitaxy on InP substrates. The samples were in‐situ annealed at different temperatures of 340 °C, 380 °C and 420 °C in an As4 atmosphere. High‐resolution X‐ray diffraction (XRD) measurements showed that zinc‐blende type (zb‐) and NiAs type (n‐) MnAs co‐exist. The XRD peak intensities of zb‐MnAs increased with annealing temperatures up to 380 °C. Also, the in‐plane XRD results showed that the intensities of zb‐MnAs (400) and (220) increased after annealing. On the other hand, the peak intensities of n‐MnAs decreased with temperature up to 380 °C. The possible transition between zinc‐blende and hexagonal MnAs is estimated to be a temperature of 380 °C. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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