Abstract
We have performed an in situ angle-resolved photoemission study of atomically flat surfaces of La 1 − x Sr x MnO 3 (LSMO) single-crystal thin films grown on SrTiO 3 (0 0 1) substrates by laser molecular beam epitaxy, and investigated the changes in the band structure induced by hole-doping. The band structures of LSMO x = 0.4 thin films consist of several highly dispersive O 2p-derived bands at the binding energies of 2.5–7 eV, almost dispersionless Mn 3d t 2 g bands at ∼2 eV, and a dispersive Mn 3d e g -derived majority band at ∼0.5 eV. We find that the energy positions of these bands monotonically shift toward higher binding energy with decreasing hole concentration in a rigid-band manner, whereas the lower binding energy part of the e g -derived emission within 1.5 eV of the Fermi level ( E F) gradually disappears. These results suggest that the simple rigid-band model does not describe the electronic structure near E F of LSMO.
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