In Situ and Real-Time Monitoring of Plasma Process Chamber Component Qualities and Predictive Controlling of Wafer Yields

Abstract

Plasma interactions with chamber components and wafers in semiconductor manufacturing processes have been monitored with a fault detection technique. Not only can this diagnostic technique monitor the wafer and process chamber components qualities, but it also has potential in saving tremendous amounts of manufacturing costs and improving equipment productivity. We have discovered that the abnormality in certain plasma processing parameters detected in the early stages of a manufacturing line can have a strong correlation with the product yield. Possible reasons for the observed correlations are explained