Abstract
We fabricated Al/TiN x /(Ti/Si)×15/Si(100) submicron devices by magnetron sputtering. Spectroscopic Ellipsometry (SE) was used for in situ characterization of TiN x , Ti and Si layers. The intermixing of Ti/Si layers and the phase transformations of TiSi during annealing were monitored by Kinetic Ellipsometry (KE). The metallic behavior of the TiN x layers was studied by analyzing their dielectric function in the IR region, measured by Fourier Transform InfraRed Spectroscopic Ellipsometry (FTIRSE), and by the unscreened plasma energy ( ℏω pu) calculated by SE data analysis.
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