Abstract
The phase transitions occurring at the surface of amorphous silicon and a-Si/SiO2interface of the sample during XeF excimer laser annealing has been investigated by nonintrusive in-situ real-time optical reflectivity and transmissivity measurements with nanosecond time resolution. Five distinct regimes were demonstrated on the basis of various excimer laser fluences. The structural transformation scenario of silicon films based on the recrystallization mechanism is proposed to interpret the formation of the grain microstructure. The ex-situ microstructural characterizations of excimer laser-irradiated region as a function of various excimer laser energy densities were characterized by scanning electron microscopy and micro-Raman scattering measurements. A super-lateral growth length of approximately 1μm was obtained in a 90-nm-thick a-Si film by a single excimer laser pulse without any substrate heating. Micro-Raman scattering measurements as a function of various excimer laser energy densities were also carried out.
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