Abstract
Strain relaxation mechanisms occurring during self-induced growth of nitride nanowires areinvestigated by in situ reflection high-energy electron diffraction and ex situ high-resolutiontransmission electron microscopy. Epitaxial GaN nanowires nucleate on an AlN buffer layerunder highly nitrogen-rich conditions via the initial formation of coherently strainedthree-dimensional islands according to the Volmer–Weber growth mechanism. Theepitaxial strain relief in these islands occurs by two different processes. Initially,strain is elastically relieved via several shape transitions. Subsequently, plasticrelaxation takes place through the formation of a misfit dislocation at the GaN/AlNinterface. At the same time, a final shape transition to fully relaxed nanowires occurs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
