In situ 타원법을 사용한 광기록매체용 Ge-Sb-Te 박막의 최적성장조건 연구

Abstract

타원법(ellipsometry)을 사용하여 광기록 매체용 Ge<TEX>$_2$</TEX> Sb<TEX>$_2$</TEX> Te<TEX>$^{5}$</TEX> (GST) 박막의 성장과정에 따른 타원상수 Ψ와 <TEX>$\Delta$</TEX>를 측정하여. GST 박막의 최적성장조건을 연구하였다. 아르곤기체압력과 DC 출력 그리고 기판의 온도를 변화시키면서 GST 박막을 성장시켰다. 제작된 시료들의 분광타원 데이터를 모델링 분석하여 GST박막의 밀도분포를 구하고 한편으로는 GST 박막이 성장하는 동안 측정한 in situ 타원 성장곡선을 분석하여 박막의 밀도분포의 변화를 추적하였다. 아르곤기체압력이 7 mTorr일 때 박막의 상대적인 밀도분포가 고르게 되었고 DC출력이 증가함에 따라 그리고 기판의 온도가 증가함에 따라 GST 박막의 밀도 균일성은 크게 향상되었다. 주사형전자현미경(SEM)을 사용하여 최적 밀도 균일성을 가지는 성장조건(7 mTorr, 45 W, 15<TEX>$0^{\circ}C$</TEX>)에서 제작된 GST 시료가 가장 균일한 구조를 보여줌을 확인하였다. 균일한 밀도 분포를 가지는 GST 박막의 성장조건 확립을 통하여 여러번 기록/재생할 때 광기록 박막의 안정성을 유지하는데 크게 기여할 것이다. The spectroe-ellipsometric constant <TEX>$\Delta$</TEX>, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change <TEX>$Ge_2Sb_2Te_5(GST)$</TEX> thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18<TEX>$0^{\circ}C$</TEX>). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18<TEX>$0^{\circ}C$</TEX> is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15<TEX>$0^{\circ}C$</TEX> of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.