Abstract
We investigate electronic and electro-physical properties of mono- and bilayer armchair single-walled carbon nanotube (SWCNT) films located on substrates of different types, including substrates in the form of crystalline silicon dioxide (SiO2) films with P42/mnm and P3121 space symmetry groups. The SWCNT films interact with substrate only by van der Waals forces. The densities of electronic states (DOS) and the electron transmission functions are calculated for SWCNT films with various substrates. The electrical conductivity of SWCNT films is calculated based on the electron transmission function. It is found that the substrate plays an important role in the formation of DOS of the SWCNT films, and the surface topology determines the degree and nature of the mutual influence of the nanotube and the substrate. It is shown that the substrate affects the electronic properties of monolayer films, changing the electrical resistance value from 2% to 17%. However, the substrate has practically no effect on the electrical conductivity and resistance of the bilayer film in both directions of current transfer. In this case, the values of the resistances of the bilayer film in both directions of current transfer approach the value of ~6.4 kΩ, which is the lowest for individual SWCNT.
Highlights
Accepted: 6 August 2021One of the most relevant topics in modern science and engineering is the search for thin flexible conductive films for different applications in electronics
We studied two types of single-walled carbon nanotube (SWCNT) films: monolayer and bilayer
Monolayer films were a layer of SWCNTs with a distance of ~3.4 Å between nanotubes, which corresponds to the distance between nanotubes in bundles formed during the synthesis of nanotubes
Summary
One of the most relevant topics in modern science and engineering is the search for thin flexible conductive films for different applications in electronics. CNT-based thin films with a thickness in the range of 1–100 nm have high electrical conductivity, transmittance, flexibility and stretchability [2]. In addition to these properties, CNT-based films are easier and cheaper in production, and more competitive in comparison with other materials used to fabricate flexible and transparent electronics devices [11,12]. In silico methods are used to study the electronic properties of mono- and bilayer films of armchair SWCNTs located on a SiO2 substrate This type of substrate was chosen because silicon dioxide SiO2 is widely used in the manufacture of electronic devices and, in particular, carbon nanodevices [31,32,33,34].
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