Abstract
In this study, high-performance In2Se3/Silicon-on-Insulator (SOI) heterojunction field-effect transistor photodetector is fabricated. The In2Se3/Si heterostructure phototransistor exhibits dual-band detection with a maximum responsivity of 12 A/W and 41 A/W for illumination of 405 nm and 800 nm wavelengths, respectively. This phototransistor has shown a lower noise-equivalent power of 6.8 fW.Hz $^{-1/2}$ and higher detectivity of $2.9\times 10^{13}$ cm.Hz $^{1/2}\text{W}^{-1}$ . Flicker noise dominates the In2Se3/SOI phototransistor with a corner frequency of 3 Hz. The device’s enhanced performance is due to the improved synergistic effect with efficient electron-hole dissociation in the heterojunction. This heterostructure based photodetector can be of great interest for dual-band (Ultra-violet and visible) detection in imaging, optical communication and healthcare applications.
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