Abstract
We report on the realization and study of laterally contacted quantum dot (QD)-micropillars. The lateral contacts are formed by ion beam induced deposition and allow for the application of in-plane electric fields. The processing was optimized to preserve high optical quality of the QD-micropillars and to minimize detrimental leakage currents while providing a good electrical control of the QD properties. Under variation of the applied voltage we are able to Stark-tune the emission energy of the QDs up to 0.12 meV and to reduce their fine structure splitting by up to a factor of 5.
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