In-Plane Magnetization-Induced Corner States in Bismuthene

Abstract

We theoretically demonstrate that the electronic second-order topological insulator with robust corner states, having a buckled honeycomb lattice, can be realized in bismuthene by inducing in-plane magnetization. Based on the sp 3 Slater–Koster tight-binding model with parameters extracted from first-principles results, we show that spin-helical edge states along zigzag boundaries are gapped out by the in-plane magnetization whereas four robust in-gap electronic corner states at the intersection between two zigzag boundaries arise. By regulating the orientation of in-plane magnetization, we show different position distribution of four corner states with different energies. Nevertheless, it respects some spatial symmetries and thus can protect the higher-order topological phase. Combined with the Kane–Mele model, we discuss the influence of the magnetization orientation on the position distribution of corner states.