Abstract
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time ${\ensuremath{\tau}}_{\mathrm{CR}}$ shows a negative in-plane magnetic-field dependence, which is similar to that of the transport scattering time ${\ensuremath{\tau}}_{t}$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
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