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Abstract
A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications. The potential of 2D layered GeAs for many applications such as anisotropic photodetection, electronics, superconductivity and thermoelectricity is being investigated in recent studies. However, the intrinsic nonlinear optical properties of 2D layered GeAs have not been explored yet. Here, thickness- and incident polarization-dependent in-plane anisotropic third-harmonic generation (THG) from the mechanically exfoliated thin GeAs flakes is reported. Furthermore, the effect of the flake thickness on the THG conversion efficiency is shown to find the optimal thickness range for high conversion efficiency. The polarization state of the emitted THG signal is also analyzed by measuring the Stokes parameters with different polarization states of the pump beam to demonstrate the capability of controlling the intensity and polarization of TH emission. Our results will create new opportunities for advancing anisotropic optical devices used for future photonic integration, optical communication and optical information processing.
Highlights
A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications
Besides the linear optical properties, 2D materials exhibit strong optical nonlinearities which endows them as promising nonlinear optical materials[10,18,19] which have been used for saturable absorption (SA)[20], second-harmonic generation (SHG)21, THG22,23, self-phase modulation[24,25], nonlinear Kerr effect[26,27] and four-wave mixing (FWM)[28]
A layered group-IV monochalcogenide of germanium selenide (GeSe), which is stable under ambient conditions, has been recently studied to show strong anisotropic nonlinear optical response in third-harmonic generation (THG) process with high conversion efficiency due to the low in-plane lattice symmetry[48]
Summary
A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications. A layered group-IV monochalcogenide of germanium selenide (GeSe), which is stable under ambient conditions, has been recently studied to show strong anisotropic nonlinear optical response in THG process with high conversion efficiency due to the low in-plane lattice symmetry[48]. It is known that the nonlinear optical properties of materials are highly sensitive to the crystal structures and lattice symmetries[50,51] Within this framework, unlike BP and GeSe, one layered group IV-V semiconductor of germanium arsenide (GeAs)[52], which exhibits a monoclinic crystal structure belonging to the C2/m space group and is ambient stable, can be considered to show high in-plane anisotropic nonlinear responses. Our results will provide new opportunities for building anisotropic nonlinear optical devices used for future photonic integrated circuits, optical communication and optical information processing
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