Abstract
The in-plane and vertical conductivities of Si/Ge short-period superlattices are determined by far-IR Fourier transform spectroscopy. It is shown that an Si 6Ge 4 superlattice exhibits significant conductivity along the superlattice axis, indicating miniband transport. In contrast, the conductivity of an Si 8Ge 8 superlattice is consistent with two-dimensional behaviour, which implies that the minibands are too narrow to permit transport along the growth axis. These conclusions can be inferred from polarization-dependent transmission measurements together with a simulation using an anisotropic dielectric function for the superlattice.
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