In Ga N ∕ Ga N multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

Abstract

We report growth of InGaN∕GaN multiple quantum wells (MQWs) on (111)-oriented bonded silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). Prior to MOCVD growth of MQWs, about a 1.2μm thick GaN layer was deposited on SOI substrate with a high-temperature transitional buffer layer. The growth conditions were tuned to realize blue-green emission peaks centered around 420–495nm from such MQWs on SOI. X-ray diffraction, atomic force microscopy, scanning electronic microscopy, and photoluminescence techniques were used to characterize these MQWs. Such an approach to realize multicolor light-emitting layers on SOI substrates is suitable for the integration of InGaN∕GaN-based optoelectronic structures on SOI-based micro-optoelectromechanical systems and sensors.