Abstract
We report the white color electroluminescence (EL) emission from InGaN∕GaN multiple quantum wells (MQWs) grown on GaN microfacets. The white color was realized by combining EL emission from InGaN∕GaN MQWs on c-plane (0001), semipolar {11−22}, and {1−101} microfacets of trapezoidal n-GaN arrays. The color of EL emission was changed from reddish to bluish color with injection current and showed a white color in the current range of 180–230mA. The variation in the color of EL emission was attributed to differences in current injection and quantum efficiency of MQWs grown on c-plane (0001) and semipolar GaN microfacets.
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