In English

Abstract

In mini-review, deals with the theory of exciton quasimolecules in a nanosystem consisting of double quantum dots of germanium synthesized in a silicon matrix. An exciton quasimolecule was formed as a result of the interaction of two spatially indirect excitons. It is shown that, depending on the distance D between the surfaces of the quantum dots, spatially indirect excitons and of exciton quasimolecules was formedin the nanosystem.The binding energy of the singlet ground state of the exciton quasimolecule has been gigantic exceeding the binding energy of the biexciton in a silicon single crystal by almost two orders of magnitude. The emergence of a band of localized electron states in the band gap of the silicon matrix was found. This band of localized electron states appeared as a result of the splitting of electron levels in the chain of germanium quantum dots. The nature of formation in the Ge/Si heterostructures was analyzed depending on the distance D between the surfaces of QDs SIEs and of exciton quasimolecules.It was shown that the binding energy of the ground singlet state of an exciton quasimolecule was gigantic, exceeding the binding energy of a biexciton in a silicon single crystal by almost two orders of magnitude.The possibility of using quasimolecules of excitons to create elements of silicon infrared nanooptoelectronics, including new infrared sensors, was established. The emergence of a band of localized electron states in the band gap of the silicon matrix was found.In this case, the band of localized electron states appeared as a result of the splitting of electron levels in the chain of germanium QDs.It was shown that the movement of an electron along the zone of localized electron states in the linear chain of germanium QDs caused an increase in photoconductivity.The effect of increasing photoconductivity can make a significant contribution in the process of converting the energy of the optical range in photosynthesizing nanosystems.