Abstract
High-dark-conductivity CdTe films have been prepared by co-evaporation of CdTe and In. The conductivity of the films prepared in this study ranged from 10-8 to 103 Scm-1. The film structure was of the zinc-blende type with a preferential orientation of the (111) planes parallel to the substrate. Analyzing the film structure by X-ray analysis, it was found that the In atoms were doped substitutionally into the CdTe during the low-concentration doping stage and then doped interstitially during the high-concentration doping stage. The properties of a very-high-conductivity film could be explained by adopting a new periodicity concept of the doped film using a tentative model.
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