In depth analysis of transfer length method application on passivated contacts under illumination

Abstract

Although solar cells operate under illumination, most electrical characterization methods are carried out in darkness, which implies some bias. In this work, we study the influence of light on the contact resistivity of the electron and hole contacts of a silicon heterojunction (SHJ) cell using the transfer length method (TLM) method in order to determine them in conditions representative of an operating solar cell at maximum power point. A specific fabrication process has been developed to preserve the passivation level. Therefore, we first focus on the patterning approach used for processing, and show that we can fabricate TLM samples with good passivation properties. Using simulations, we also discuss on the influence of inhomogeneities in the excess minority carrier spatial concentration on the TLM analysis. These inhomogeneities, due to shading, local damages in the passivation or to carrier drift under bias voltage make the measurement complicated to carry out without significant error. Our results suggest that the measurement is more precise in darkness and at very high injection levels, under rear illumination and a low voltage bias.