Abstract
PAGE 1222 A team working in Malaysia have developed a compact metamaterial antenna for ultra wideband applications. The antenna uses four metamaterial unit cells that show both negative permeability and negative permittivity, which allows the antenna to operate with a peak gain of 8.57 dBi. The antenna has an operating range of 3.07 GHz to 19.91 Ghz. PAGE 1229 A technique for designing a parasitic patch antenna array with a beam that can be steered dynamically is presented by a team working in the USA. The team fabricated a three element patch antenna array operating at 5 GHz, which uses a system of oil filled channels filled with movable metal cylinders and glass balls to steer the beam ±22.5°. The metamaterial structure allows the antenna to be compact while maintaining its performance PAGE 1286 A team working in China have fabricated high performance, fully transparent, bottom gate type calcium-doped zinc oxide thin film transistors on glass substrate. The team investigated the impact that substrate temperature had during active layer deposition on the electrical properties of the transistors. The antenna was fabricated using 3D printing PAGE 1251 A team working in the UK present their work on pedestrian motion tracking. To address the problems of abrupt changes in motion and delays in the tracking process, the team use a method based on simulations of the uncertainty of an electron's position around the nucleus. This allows tracking of abrupt motions with low delay. The team found a large improvement in transistors fabricated using the optimum temperature PAGE 1277 Photonic crystal cavities with a high Q factor of 200,000 have been produced using deep ultraviolet lithography. The team, from the UK, say that restrictions have prevented the realisation of high Q factor optical resonators. The team think the advance could help the mass-production of ultra-compact nanophotonic devices. The method propagates particles in areas a person is most likely to be Deep Ultraviolet Lithography is essential for the mass production of silicon devices
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
