In brief

Abstract

PAGE 786 Research from Pakistan and the UK presents a novel dual-port diversity/MIMO antenna for UWB applications. The system is compact and suitable for non-planar applications as well as being reconfigurable. The MIMO elements can be placed in stacked/back-to-back as well as in orthogonal/around-corner arrangements. Compact and reconfigurable systems (including UWB) are important for Wide Personal Area Networks. PAGE 826 A system that implements a temperature gradient sensor and a beacon signal transmitter has been proposed in work from Spain. The system is fully autonomous and self-powered by energy harvesting from a very low temperature gradient. It was originally conceived to power a low-power satellite beacon and has found applications in automatic air conditioning and heating systems. Novel dual-port diversity/MIMO antenna has potential ultrawide band applications PAGE 833 A novel computational technique to study the terminal influence inside the three-dimensional nano-scale MOSFET using Technology CAD simulations is shown in work from the United States. Within the MOSFET, the derivative of the electrostatic potential can be taken with respect to voltages at each terminal; when these derivatives are summed together, they always sum to unity. These functions can be used to quantify the relative influence or control of terminals anywhere inside the MOSFET, including the channel. Temperature gradient sensor and beacon signal transmitter used in automated air-conditioning and heating systems PAGE 817 Researchers in the United States have demonstrated the first contactless radio frequency (RF) probes for on-wafer characterisation of microwave integrated circuits (MICs) at temperatures as high as 200°C. The high-temperature contactless probing techniques overcome the limitations of conventional ground-signal-ground coplanar waveguide probes, which rely on good physical contact. They provide a fast, reliable and inexpensive method to quickly screen MICs for high temperature RF telemetry. Novel computational technique is presented to study the terminal influence inside the three-dimensional nano-scale MOSFET PAGE 799 Researchers in Japan present a PLZT capacitor fabrication process with better hydrogen degradation resistance and fatigue endurance by adding a thin aluminium-doped zinc oxide (AZO) buffer layer. This could be applied to ferroelectric random access memory, MEMS and piezoelectric fields. The hydrogen degradation resistance of the PLZT capacitors was improved by over 80% of an initial polarisation value. Contactless radio frequency probes provide a fast, reliable and inexpensive method to quickly screen MICs for high temperature RF telemetry Issue 1 of the IET's latest Letters journal is now available at www.theiet.org/htl with trial access to all content throughout 2014