Abstract
In-beam Mossbauer spectroscopy (IBMS) is used to study single isolated57Fe impurities after implantation in metals and semiconductors with very restricted or even vanishing solubility for Fe. From the Mossbauer parameters it can be inferred that the Fe implants take up substitutional as well as interstitial sites. The strongly increased electron density at the interstitial position in metals is qualitatively explained by the pressure resulting from the small interstitial volume. In Si, Sc and Pb exponential line broadening due to interstitial diffusion has been observed. Additional information on the dynamic behavior and local magnetic structure in some of the systems presented comes from perturbed angular distribution experiments (PAD) performed on an isomeric state of54Fe.
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