Abstract
An in-band end-pumped LGS electro-optically (EO) Q-switched Ho:YAP laser has been investigated and demonstrated. The LGS crystal based on EO modulator was designed to operate in pulse-on mode with a 1/4 wave voltage of 2400 V, which was the lowest driving voltage at 2 μm wavelength for LGS crystal as far as we know. Under continuous-wave (CW) regime, a maximum average output power of 6.5 W was obtained from the Ho:YAP laser with a slope efficiency of 50.6% when an incident pump power was 16 W. When running in EO Q-switching regime, a maximum output power of 4 W was obtained with a single pulse energy of 1 mJ and a pulse width of 33 ns at a repetition rate of 4 kHz. At the repetition rate of 2 kHz, the maximum single pulse energy of 1.5 mJ and the shortest pulse width of 23 ns were achieved, corresponding to a pulse peak power of as high as 65 kW.
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