Abstract
We demonstrate In-assisted desorption of native GaAs surface oxides at substrate temperatures of 480–550 °C. The oxides are removed through production of volatile Ga and In suboxides, Ga2O, and In2O. Compared to a Ga-assisted desorption process, excess In is easily removed at low substrate temperature, favouring a clean, smooth surface. The feasibility of using In-assisted desorption for the regrowth of high quality quantum dot structures is shown.
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