Abstract
Cu(InAl)Se 2 (CIAS) thin films of different thicknesses were prepared by chemical bath deposition technique (CBD) onto well-cleaned substrates at different temperatures from two different chemical baths. The thickness of the deposited films has been determined by gravimetric technique. The composition of indium and aluminum constituents in the prepared CIAS films has been found from XRD and transmittance spectra. The results were confirmed with energy dispersive X-ray analysis (EDAX) and are presented in detail in this paper.
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