Abstract
High-quality In 0.25Ga 0.75As films were grown on low-temperature (LT) ultra-thin GaAs buffer layers formed on GaAs (0 0 1) substrate by molecular beam epitaxy. The epilayers were studied by atomic force microscopy (AFM), photoluminescence (PL) and double crystal X-ray diffraction (DCXRD). All the measurements indicated that LT thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy.
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