Abstract
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, E g = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., E i = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds N c = 4.7 × 10 13 cm −3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
