Abstract
We report results for photoluminescence studies of an impurity-related defect system in 450 \ifmmode^\circ\else\textdegree\fi{}C annealed Czochralski-grown silicon resulting in optical emission with a wavelength near 1.7 \ensuremath{\mu}m. The photoluminescence emission is found to have a significant intensity that persists to room temperature. The external quantum efficiency at 300 K is measured to be approximately 2.5\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}5}$.
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