Abstract
Linear, third-order nonlinear and total optical absorption coe cients associated with intra-conduction band in wurtzite unstrained (In,Ga)N-GaN coupled quantum wells are calculated. Based on the e ective-mass and the one-band parabolic approximations, the well and the barrier-widths e ects are investigated variationally under nite con nement potential barrier. The results indicate that the structure size have a great in uence on the optical properties. The results reveal also that larger optical absorption coe cients are obtained compared to single quantum well and a signi cant red-shift is obtained as the structure size increases. It is found that the modulation of the absorption coe cients can be easily obtained by adjusting the barrier and/or the well widths.
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