Abstract
The redistribution in Bi-implanted Si was measured after irradiation with 25-ps or 35-ns Nd laser pulses by channeling effect measurements in combination with MeV He+ backscattering. For both pulse durations some of the Bi accumulated at the surface and the amount of segregation depended on the substrate orientation. The impurity redistribution was similar after nanosecond or picosecond laser pulses thus indicating that the solidification velocities were comparable for the two cases.
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