Abstract
A new simple model for profiling the impurities within a shallow p‐n junction from spreading resistance data is proposed. Dickey's capacitance analogue method is extended to a “multilayer” geometry. Direct translation of the differential sheet conductance method to the spreading resistance method is performed. As examples of this approach, the cases of shallow boron (11B+)‐, phosphorus (31P+)‐, and arsenic (As)‐doped layers in silicon are discussed.
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