Abstract
A new algorithm for spreading resistance measurement data processing is proposed. The method, originally used for solving a thermal resistance problem of a multilayered heat sink, is applied to electrical resistance problems to give fast, exact, multilayer correction factors for converting measured spreading resistances to a profile. The correction factor is calculated by times multiplication of matrices instead of the inversion of a matrix, where is an arbitrary number changing with the data points of spreading resistances (layers). The computer program, developed on the basis of this algorithm, is applied to impurity profile evaluation of thin (0.5–1.5 μm) epitaxial silicon wafers for millimeter wave IMPATT diode fabrication and affords the results agreeing with capacitance voltage profiling.
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