Abstract
The junction and insulated gate FET (JIGFET) is a novel type of JFET which is formed by implantation of a deep channel between source and drain through a MOST gate. For high voltages on the gate an inversion layer is created underneath the oxide. This inversion layer is laterally connected to the substrate. In this way a new channel control mechanism for FET's is achieved in which the inversion layer is used as a substitute for a p+-n- or an n+-p-junction. This results in a very high bulk transconductance, which is of considerable importance in many applications. In this paper the n-channel JIGFET's with implanted channels of 2.4 × 1012p+ions/cm2at 100 keV and 3.4 × 1012p+ ions/cm2at 160 keV are investigated. The implantation profiles are calculated from pulsed C-V measurements. From these data the dc characteristics are calculated with the abrupt space charge layer edge (ASCE) approximation and compared with the experiments for both high and low drain voltages.
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