Abstract
A new investigation on photo-ionization cross section (PICS) of a donor impurity confined in a GaAs/AlGaAs core/shell elliptic quantum dots (CSEQDs) has been performed under electric field (EF) effect. By means of the finite element method (FEM), we have computed the binding energy (BE), oscillator strength Pif and PICS within the framework of the effective mass theory (EMT). Our numerical results reveal that the stark shift is greatly dependent on the strength of the EF, the degree of ellipticity β, and the states of electronic transitions. It can take positive or negative values depending on the situation. In addition, the photo-ionization describing the transition from the donor impurity ground-state (1simp) to one of the conduction sub-band states (1s0, 2s0, and 2p0) is affected by the shape of the quantum dots (QDs) and the EF. We demonstrated that varying internal and external parameters may control the photo-ionization cross-section. These characteristics can be exploited to fabricate optoelectronic devices like QD infrared photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
